1/6 preliminary data june 2000 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change wit hout notice. STGP20NB60K n-channel 20a - 600v - to-220 powermesh? igbt n high input impedance (voltage driven) n low on-voltage drop (v cesat ) n low on-losses n low gate charge n high current capability n off losses include tail current n very high frequency operation n short circuit rated n latch current free operation description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding performances. the suffix k identifies a family optimized for high frequency motor control applications with short circuit withstand capability. applications n high frequency motor controls n u.p.s. n welding equipments absolute maximum ratings type v ces v ce(sat) i c STGP20NB60K 600 v < 2.8 v20 a symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuos) at t c = 25c 40 a i c collector current (continuos) at t c = 100c 20 a i cm ( n ) collector current (pulsed) 80 a tsc short circuit withstand 10 m s p tot total dissipation at t c = 25c 125 w derating factor 1 w/c t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c to-220 1 2 3 internal schematic diagram
STGP20NB60K 2/6 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic switching on rthj-case thermal resistance junction-case max 1.0 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-h thermal resistance case-heatsink typ 0.5 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge = 0) v ce = max rating, t c = 25 c 10 a v ce = max rating, t c = 125 c 100 a i ges gate-emitter leakage current (v ce = 0) v ge = 20v , v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge , i c = 250a 57v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 20 a 2.3 2.8 v v ge = 15v, i c = 20 a, tj =125c 1.9 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce = 25 v , i c =20 a 8s c ies input capacitance v ce = 25v, f = 1 mhz, v ge = 0 1300 pf c oes output capacitance 200 pf c res reverse transfer capacitance 30 pf q g total gate charge v ce = 480v, i c = 20 a, v ge = 15v 90 nc q ge gate-emitter charge t.b.d. nc q gc gate-collector charge t.b.d. nc twsc short circuit withstand time v ce = 0.5 bvces , v ge = 15 v , tj = 125c , r g = 10 w 10 s symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v cc = 480 v, i c = 20 a r g =10 w , v ge = 15 v 20 ns t r rise time 70 ns (di/dt) on turn-on current slope v cc = 480 v, i c = 20 a r g =10 w v ge = 15 v,tj = 125c 350 a/s eon turn-on switching losses 300 j
3/6 STGP20NB60K electrical characteristics (continued) switching off note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c = 20 a, r ge = 10 w , v ge = 15 v 120 ns t r (v off ) off voltage rise time 35 ns t d ( off ) delay time 130 ns t f fall time 80 ns e off (**) turn-off switching loss 0.45 mj e ts total switching loss 0.6 mj t c cross-over time v cc = 480 v, i c = 20 a, r ge = 10 w , v ge = 15 v tj = 125 c 190 ns t r (v off ) off voltage rise time 55 ns t d ( off ) delay time 160 ns t f fall time 150 ns e off (**) turn-off switching loss 0.75 mj e ts total switching loss 1.05 mj
STGP20NB60K 4/6 fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
5/6 STGP20NB60K dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
STGP20NB60K 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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